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| STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESHTM IGBT General features Type STGD6NC60HD VCES 600V VCE(sat)Max @25C <2.5V IC @100C 7A 3 1 Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. Internal schematic diagram Applications High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers Order codes Part number STGD6NC60HDT4 Marking GD6NC60HD Package DPAK Packaging Tape & reel February 2007 Rev 3 1/15 www.st.com 15 Contents STGD6NC60HD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STGD6NC60HD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICM(2) VGE IF PTOT Tstg Tj Tl Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Collector current (pulsed) Gate-emitter voltage Diode RMS forward current at Tc=25C Total dissipation at TC = 25C Storage temperature - 55 to 150 Operating junction temperature Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C Value 600 15 7 21 20 10 56 Unit V A A A V A W C C 300 1. Calculated according to the iterative formula: 2. Pulse width limited by max junction temperature Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 2 62.5 Unit C/W C/W 3/15 Electrical characteristics STGD6NC60HD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC= 3A voltage VGE= 15V, IC= 3A, Tc= 125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= Max rating,TC= 25C VCE=Max rating,TC= 125C VGE= 20V, VCE= 0 VCE = 15V, IC= 3A 5.75 10 1 100 3 Table 4. Symbol Cies Coes Cres Qg Qge Qgc ICL Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-off SOA minimum current Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, VGE = 15V, (see Figure 17) Vclamp=390V, Tj=150C, , RG=10 VGE=15V Min. Typ. Max. 205 32 5.5 13.6 3.4 5.1 19 Unit pF pF pF nC nC nC A 4/15 STGD6NC60HD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Test conditions VCC = 390V, IC = 3A , RG= 10 VGE= 15V, Tj= 25C (see Figure 18) VCC = 390V, IC = 3A RG= 10 VGE= 15V, , Tj=125C (see Figure 18) VCC = 390V, IC = 3A, RGE = 10 VGE = , 15V,TJ=25C (see Figure 18) VCC = 390V, IC = 3A, , RGE=10 VGE =15V, Tj=125C (see Figure 18) Min. Typ. 12 5 612 Max. Unit ns ns A/s Turn-on delay time Current rise time Turn-on current slope 13 4.3 560 ns ns A/s Off voltage rise time Turn-off delay time Current fall time 40 76 100 ns ns ns Off voltage rise time Turn-off delay time Current fall time 60 98 124 ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 3A , RG= 10 VGE=15V, Tj=25C (see Figure 18) VCC = 390V, IC = 3A , RG= 10 VGE= 15V, Tj= 125C (see Figure 18) Min. Typ. 20 68 88 Max. Unit J J J Turn-on switching losses Turn-off switching losses Total switching losses 37 93 130 J J J 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/15 Electrical characteristics STGD6NC60HD Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 1.5A If = 1.5A, Tj = 125C If = 3A,VR = 40V, Tj = 25C, di/dt = 100 A/s (see Figure 19) If = 3A,VR = 40V, Tj =125C, di/dt = 100A/s (see Figure 19) Min. Typ. 1.6 1.3 21 14 1.36 34 32 1.88 Max. 2.1 Unit V V ns nC A ns nC A 6/15 STGD6NC60HD Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/15 Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. STGD6NC60HD Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/15 STGD6NC60HD Figure 13. Thermal Impedance Electrical characteristics Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 9/15 Test circuit STGD6NC60HD 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/15 STGD6NC60HD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/15 Package mechanical data STGD6NC60HD TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 12/15 STGD6NC60HD Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 13/15 Revision history STGD6NC60HD 6 Revision history Table 8. Date 04-Aug-2005 07-Mar-2006 07-Feb-2007 Revision history Revision 1 2 3 First release Complete version The document has been reformatted Changes 14/15 STGD6NC60HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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